User:Omega/RAM

RAM Chips
http://www.idhw.com/textual/guide/noin_ram_chip.html Manufacturer	Logo(s) on chip	Serial starts with A DATA	 			AD Alliance Semiconductor		AS Alps	 			3DA Apacer				AM Ascend				AD ATOP	 			AT Buffalo Crucial	 			CT Cypress				CY Elite MT			M or LP elixir	 			N2D Elpida	 			DK ESMT				M Etron Technology		EM eX	 			ITC Fujitsu				MB Galvantech			GVT GeIL	 			GL or 6L G-Link Technology		GCT Hitachi				HM5 HMC				HM Hyundai (Hynix)			HY IBM	 			IBM IDT (Integrated Device Tech)	IDT Infineon			HYB intel ISSI J.tec	 			JB KingMax				KDL LD	 			PC LGS (Lucky Goldstar)	 	GM or SDS M-PLUS	 			ISD M.tec				TB Micron Technology		MT Mira				P2 Mitsubishi			M5M Mosel Vitelic			V MoSys				M Motorola			MCM or SCM Mr. STONE			ITC Nanya		 		NT NCP	 			NP ND	 			ND NEC				µPD Oki				MSM Panasonic	 		MN Paradigm	 		PDM PQI				PQI PMI	 			HP Renesas	 			R1 SBT	 			SB SEC (Samsung Semiconductor)	K4 or KM Semicon	SEMICON			SD Siemens				HYB Silicon Magic			SM Sony South Land Micro (SMT)	 	- SpecTek				- Texas Instruments		TMS TICE	 			M53 tmTECH	 			T35 Tonicom				TM Toshiba				TC5 Transcend TwinMOS				TM UMC	 			UM UNIC	 			UC V-Data	 			VD Vanguard			VG ViGOUR	 			VC Winbond				W WMX	 			WX Xelo	 			IM

Micron
9842A
 * Micron Technology
 * Micron RAM chip marking
 * MT4C4007J-6
 * MT63V32128Q-5

TG -8B S 9810 C USA
 * MT 48LC2M8A1

TG -8 B 0036 1-1
 * MT 46V8M8

MT51SD16100T-7 0120 TR
 * MT MOSEL

Z9CJF 7HT7
 * 4AB11

MT / MOSEL, MT - Micron Technology

28 - Flash (dual supply) 4 - DRAM 41 - SGRAM 46 - SDRAM DDR 48 - SDRAM sync 4A - SDRAM DDR-2 57 - DRAM DDR sync 58 - SRAM sync burst 59 - SRAM sync lastwrite 63 - ?
 * 4 - RAM type:

V - 2.5V L - 3.3V [blank] - 5.0V
 * V - Voltage:

C - CMOS B - BiCMOS
 * C - Manufacturing process:

1M16 - 1MBit x 16 2M8 - 2MBit x 8 4M4 - 4MBit x 4 8M8 - 8MBit x 8 16M8 - 16MBit x 8 64K18 - 64kBit x 18 64K36 - 64kBit x 36 32K36 - 32kBit x 36 1004 - 4MBit x 1, FP 4001 - 1MBit x 4, FP 4007 - 1MBit x 4, EDO, 1K refresh 16270 - 256kBit x 16, EDO 16257 - 256kBit x 16, FP 32128 - 128kBit x 32
 * 16 - bit organization:

E5 - 1K refresh - EDO E7 - 2K refresh - EDO E8 - 2K refresh - EDO E9 - 4K refresh - EDO A1 - 4K refresh - Fast Page A2 - tWR = 2 clk B1 - 2K refresh - Fast Page B2 - 3.3 & 5.0 Volt signals B3 - 3.3 Volt signals only C3 - 1K refresh - Fast Page
 * 2 - Refresh:

J - SOJ Q - QFP TG - 54pin TSOP II FB - 60pin FBGA (8mm x 16mm) FC - 60pin FBGA (11mm x 13mm)
 * J - Package option:

5 - 50ns 6 - 60ns 7 - 70ns 75 - 7.5ns @CL=3 (PC133) 7E - 7.5ns @ CL=2 (PC133) 8E - 10.0ns @CL=2 (PC100) 10 - 10ns
 * 6 - min cycle time:


 * C - die revision: A/B/C ...

98 - year of manufacture 12 - week of manufacture
 * 9812 - date of manufacture:


 * 7HT7 - Serialization code

Hyundai / SK hynix

 * Hyundai Electronics http://www.hea.com
 * Merged with Lucky Goldstar Semi [LGS] 1999
 * Renamed to Hynix Semiconductors - SK hynix

TC-7 9909A KOREA
 * Hyundai / SK hynix RAM chip marking
 * HY57V161610D

HY5DV641622AT-36 KOREA
 * hynix 134A

9705A KOREA
 * HY57V56420BT
 * HY534256AJ-70
 * HY51V42260-60

---


 * HY	HY - Hyundai / hynix

51 - DRAM 53 - DRAM (EDO ?) 57 - SDRAM 5D - SDRAM DDR 62 - SRAM slow / superslow 63 - SRAM fast 64 - SRAM pseudo
 * 57 - RAM type:

[blank] - 5.0V V - 3.3V Y - 3.0V U - 2.5V W - 2.5V (VDDQ=1.8V) VL - 2.35V S - 1.8V
 * V - Voltage:

S - self refresh [none] - standard
 * S - Refresh:

3C - 256KBit 31 - 1MBit 34 - 1MBit 4 - 4MBit, 1k refresh 41 - 4MBit 42 - 4MBit 16 - 16M, 4k refresh 17 - 16M, 2k refresh 18 - 16M, 1k refresh 32 - 32M, 4k refresh 64 - 64M, 8k refresh 65 - 64M, 4k refresh 129 - 128M, 4k refresh 28 - 128M, 4k refresh 2A - 128M, 4k refresh TCSR 257 - 256M, 8k refresh 56 - 256M, 8k refresh 12 - 512M, 8k refresh
 * 16 - Memory density:

40 - x4 41 - x4 (4CAS) 80 - x8 16 - x16 17 - x16 (2CAS) 18 - x16 (2WE) 32 - x32 (2CAS) 33 - x32 (2WE) 34 - x32 (4CAS)
 * 16 - bit organization:

1 - 2 banks 2 - 4 banks 0 - LVTTL 1 - SSTL 2 - SSTL2
 * L - Bank / Interface:

5 - RAM type: 0 - FastPage 3 - EDO 4 - EDO 5 - EDO

Fab. Ichon: [blank] / A / B / C / D ... Fab. Cheong-ju: H / HA / HB / HC / HD ...
 * C - die revision

J - SOJ T - TSOP-II TC - TSOP-II 400mil TQ - TQFP 100pin R - TSOP reverse S - stack package (Hynix) K - stack package (M&T) J - stack package (others)
 * J - Package option:

50 - 50ns 60 - 60ns 70 - 70ns 15 - 15ns (66MHz) 12 - 12ns (83MHz) 10 - 10ns (100MHz) 10s - 10ns (100MHz CL3) 10p - 10ns (100MHz CL2&3) 8 - 8ns (125MHz) 75 - 7.5ns (133MHz) 7 - 7ns (143MHz) 6 - 6ns (166MHz) 55 - 5.5ns (183MHz) 5 - 5ns (200MHz)
 * 7 - min cycle time:

[none] - PC66 [2-2-2] A - PC100 [3-2-3] B - PC100 [2-2-2] C - PC100 [2-2-2] D - PC100 [2-2-2]
 * A - RAS/CAS:

99 - year of manufacture 09 - week of manufacture
 * 9909 - date of manufacture:


 * 134A - Serialization code